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翻訳と辞書　辞書検索 [ 開発暫定版 ] スポンサード リンク QBD (electronics) ： ウィキペディア英語版 QBD (electronics) QBD is the term applied to the charge-to-breakdown measurement of a semiconductor device. It is a standard destructive test method used to determine the quality of gate oxides in MOS devices. It is equal to the total accumulated charge passing through the dielectric layer just before failure. Thus QBD is a measure of time-dependent gate oxide breakdown. As a measure of oxide quality, QBD can also be a useful predictor of product reliability under specified electrical stress conditions. == Test method == Voltage is applied to the MOS structure to force a controlled current through the oxide, i.e. to inject a controlled amount of charge into the dielectric layer. By measuring the time after which the measured voltage drops towards zero (when electrical breakdown occurs) and integrating the injected current over time, the charge needed to break the gate oxide is determined. This gate charge integral is defined as: $Q\_=\backslash int\_^$ is the measurement time at the step just prior to destructive avalanche breakdown. 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「QBD (electronics)」の詳細全文を読む スポンサード リンク 翻訳と辞書 : 翻訳のためのインターネットリソース Copyright(C) kotoba.ne.jp 1997-2016. All Rights Reserved.